Freescale Semiconductor
Technical Data
Heterojunction Bipolar Transistor
Technology (InGaP HBT)
Broadband High Linearity Amplifier
The MMG3H21NT1 is a General Purpose Amplifier that is internally input
matched and internally output matched. It is designed for a broad range of
Class A, small--signal, high linearity, general purpose applications. It is
suitable for applications with frequencies from 0 to 6000 MHz such as
Cellular, PCS, BWA, WLL, PHS, CATV, VHF, UHF, UMTS and general
small--signal RF.
Features
? Frequency: 0--6000 MHz
? P1dB: 20.5 dBm @ 900 MHz
? Small--Signal Gain: 19.3 dB @ 900 MHz
? Third Order Output Intercept Point: 37 dBm @ 900 MHz
? Single 5 Volt Supply
? Active Bias
? Internally Matched to 50 Ohms
? Cost--effective SOT--89 Surface Mount Package
? In Tape and Reel. T1 Suffix = 1,000 Units, 12 mm Tape Width, 7 inch Reel.
Document Number: MMG3H21NT1
Rev. 2, 9/2012
MMG3H21NT1
0--6000 MHz, 19.3 dB
20.5 dBm
InGaP HBT
CASE 2142--01
SOT--89
PLASTIC
Table 1. Typical Performance (1)
Table 2. Maximum Ratings
Characteristic
Small--Signal Gain
(S21)
Input Return Loss
(S11)
Symbol
G p
IRL
900
MHz
19.3
--18
2140
MHz
16
--25
3500
MHz
14
--20
Unit
dB
dB
Rating
Supply Voltage
Supply Current
RF Input Power
Storage Temperature Range
Symbol
V CC
I CC
P in
T stg
Value
7
300
12
--65 to +150
Unit
V
mA
dBm
° C
Output Return Loss
ORL
--10
--6
--8
dB
Junction Temperature
(2)
T J
150
° C
(S22)
2. For reliable operation, the junction temperature should not
Power Output @1dB
P1dB
20.5
19.8
17.7
dBm
exceed 150 ° C.
Compression
Third Order Output
OIP3
37
34
31
dBm
Intercept Point
1. V CC = 5 Vdc, T A = 25 ° C, 50 ohm system, in Freescale
application circuit.
Table 3. Thermal Characteristics
Characteristic
Thermal Resistance, Junction to Case
Case Temperature 84 ° C, 5 Vdc, 90 mA, no RF applied
Symbol
R θ JC
Value (3)
38.6
Unit
° C/W
3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf .
Select Documentation/Application Notes -- AN1955.
? Freescale Semiconductor, Inc., 2008, 2011--2012. All rights reserved.
RF Device Data
Freescale Semiconductor, Inc.
MMG3H21NT1
1
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